?2007 fairchild semiconductor corporation FDP8447L rev.b www.fairchildsemi.com 1 FDP8447L n-channel powertrench ? mosfet tm may 2007 FDP8447L n-channel powertrench ? mosfet 40v, 50a, 8.7m ? features ? max r ds(on) = 8.7m ? at v gs = 10v, i d = 14a ? max r ds(on) = 11.2m ? at v gs = 4.5v, i d = 11a ? fast switching ? rohs compliant general description this n-channel mosfet has been produced using fairchild semiconductor?s proprietary powertrench technology to deliver low r ds(on) and optimized bv dss capability to offer superior performance benefit in the application. applications ? inverter ? power supplies mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c 50 a -continuous (silicon limited) t c = 25c 65 -continuous t a = 25c (note 1) 12 -pulsed 100 e as drain-source avalanche energy (note 3) 153 mj p d power dissipation t c = 25c 60 w power dissipation t a = 25c (note 1) 2 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 2.1 c/w r ja thermal resistance, junction to ambient (note 1) 62.5 device marking device package reel size tape width quantity FDP8447L FDP8447L to-220ab tube n/a 50units d g s d g s to-220 fdp series
FDP8447L n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2007 fairchild semiconductor corporation FDP8447L rev.b electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 40 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 34 mv/ c i dss zero gate voltage drain current v ds = 32v, 1 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1 1.7 3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -6 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 14a 7.7 8.7 m : v gs = 4.5v, i d = 11a 8.9 11.2 v gs = 10v, i d = 14a, t j = 125 c 12.1 13.7 g fs forward transconductance v dd = 5v, i d = 14a 74 s dynamic characteristics c iss input capacitance v ds = 20v, v gs = 0v, f = 1mhz 1880 2500 pf c oss output capacitance 245 325 pf c rss reverse transfer capacitance 150 225 pf r g gate resistance f = 1mhz 1.4 : switching characteristics t d(on) turn-on delay time v dd = 20v, i d = 14a, v gs = 10v, r gen = 6 : 9 18 ns t r rise time 7 14 ns t d(off) turn-off delay time 28 45 ns t f fall time 4 10 ns q g total gate charge v gs = 0v to 10v v dd = 20v, i d = 14a 35 49 nc q g total gate charge v gs = 0v to 5v 19 27 nc q gs gate to source charge 4.7 nc q gd gate to drain ?miller? charge 6.2 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 14a (note 2) 0.8 1.2 v t rr reverse recovery time i f = 14a, di/dt = 100a/ p s 28 42 ns q rr reverse recovery charge 22 33 nc notes: 1. r t ja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as th e s o l d e r m o u n t i n g s u r f a c e o f t h e d r a i n p i n s . r t jc is guaranteed by design while r t ja is determined by the user?s board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3. starting t j = 25c, l = 1mh, i as = 17.5a, v dd = 40v, v gs = 10v.
FDP8447L n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2007 fairchild semiconductor corporation FDP8447L rev.b typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 20 40 60 80 100 v gs = 3.5v v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = 4v v gs = 3v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 020406080100 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 3.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 4.5v v gs = 4v v gs = 3v v gs = 10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 14a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 4 8 12 16 20 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = 7a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1234 0 20 40 60 80 100 v ds = 5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDP8447L n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2007 fairchild semiconductor corporation FDP8447L rev.b figure 7. 0 10203040 0 2 4 6 8 10 i d = 14a v dd = 30v v dd = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 20v gate charge characteristics figure 8. 0.1 1 10 10 100 1000 10000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 40 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 300 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 20 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 limited by package r t jc = 2.1 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 100 0.1 1 10 100 100ms 10ms 1ms 100us i d , drain current (a) v ds , drain to source voltage (v) 300 this area is limited by r ds(on) single pulse t j = max rated r t jc = 2.1 o c/w t c = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 single pulse r t jc = 2.1 o c/w t c = 25 o c 50 v gs = 10v p ( pk ) , peak transient power (w) t, pulse width (s) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDP8447L n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FDP8447L rev.b figure 13. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.1 1 single pulse r t jc = 2.1 o c/w 0.05 duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c typical characteristics t j = 25c unless otherwise noted
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